Control of complex quantum structures in droplet epitaxy
نویسندگان
چکیده
منابع مشابه
Complex Nanostructures by Pulsed Droplet Epitaxy
What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the nanostructure. An often overlooked parameter, which has a...
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Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy (MBE) chamber. Autocorrelation measurements establish single-photon emission from LDE QDs with a very small correlation function g ((2))(0)≃ 0.01 o...
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In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 10(10) to 1.1 × 10(11) cm(-2) by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN forma...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2019
ISSN: 0268-1242,1361-6641
DOI: 10.1088/1361-6641/ab337e